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  july 2007 rev 1 1/11 11 ESDAULC6-3BP6 esdaulc6-3bf2 esd protection for high speed interface main applications where transient overvoltage protection in esd sensitive equipment is required, such as: computers printers communication systems cellular phones handsets and accessories video equipment features ultra low capacitance 1.25 pf max. bi-directional protection rohs package description the esdaulc6-3bxx is a monolithic application specific discrete device dedicated to esd protection of high speed interfaces such as usb2.0. the device is ideal for applications where both reduced print circuit board space and power absorption capability are required. benefits ultra low capacitance bidirectional esd protection low pcb space consumption: 2.5 mm 2 max footprint (1.7 mm 2 for flip-chip) enhanced esd protection: ? 15 kv contact discharge ? 15 kv air discharge no insertion lo ss to 3.0 ghz ultra low leakage current high reliability offered by monolithic integration figure 1. functional diagram figure 2. pin configuration complies with the following standards: table 1. order codes part number marking ESDAULC6-3BP6 3 esdaulc6-3bf2 3b iec 61000-4-2 level 4: 8 kv (contact discharge) 15 kv (air discharge) mil std 883g-method 3015-7: class 3b hbm (human body model) sot-666 ESDAULC6-3BP6 flip-chip esdaulc6-3bf2 i/o1 i/o2 gnd nc nc i/o3 1 2 34 5 6 b 1 2 a i/o2 i/o3 i/o1 gnd top view ESDAULC6-3BP6 bump side view esdaulc6-3bf2 gnd i/o1 i/o2 i/o3 www.st.com
characteris tics ESDAULC6-3BP6, esdaulc6-3bf2 2/11 1 characteristics table 2. absolute maximum ratings symbol parameter value (min.) unit v pp peak pulse voltage (1) 1. for a surge greater than the maximum val ues, the diode will fail in short-circuit. iec 61000-4-2 contact discharge iec 61000-4-2 air discharge 15 15 kv t j maximum operating junction temperature 150 c t stg storage temperature range -55 to +150 c t l maximum lead temperature for soldering during 10 s at 5 mm for case 260 c table 3. electrical characteristics (t amb = 25 c) symbol parameter v rm stand-off voltage v br breakdown voltage v cl clamping voltage i rm leakage current i pp peak pulse current t voltage temperature coefficient c capacitance r d dynamic resistance parameter test condition min typ max unit v br (1) 1. same value for i/o to i/o and i/o to gnd i r = 1 ma 6.0 9.2 v i rm v rm = 5 v 0.5 a r d square pulse, i pp = 6 a, t p = 2.5 s 1.4 t 1.2 10 -4 /c c i/o-i/o v i/o = 0 v, f = 1 mhz, v osc = 30 mv sot-666 1.0 1.25 pf flip-chip 1.25 1.5 v i/o = 1.65 v, v cc = 4.3 v, f = 1 mhz, v osc = 400 mv sot-666 0.75 0.9 flip-chip 0.9 1.20 v i v cl v cl v br v br v rm v rm i rm i pp slope: 1/r d
ESDAULC6-3BP6, esdaulc6-3bf2 characteristics 3/11 figure 3. relative variation of peak pulse power versus initial junction temperature (sot-666) figure 4. relative variation of peak pulse power versus initial junction temperature (flip-chip) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 p [t initial] / p [t initial=25c) pp j pp j t (c) j 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 25 50 75 100 125 150 p pp [t j initial] / p pp [t j initial=25c] t j (c) figure 5. peak pulse power versus exponential pulse duration (sot-666) figure 6. peak pulse power versus exponential pulse duration (flip-chip) 10 100 1000 1 10 100 p (w) pp t (s) p t initial=25c j 10 100 1000 1 10 100 p pp (w) t j initial = 25 c t p (s) figure 7. clamping voltage versus peak pulse current (typical values) (sot-666) figure 8. clamping voltage versus peak pulse current (typical values) (flip-chip) 0.1 1.0 10.0 5 1015202530 i (a) pp v (v) cl 8/20s t initial=25c j 0.1 1.0 10.0 5 1015202530 i pp (a) square wave 2.5 s t j initial =25 c v cl (v)
characteris tics ESDAULC6-3BP6, esdaulc6-3bf2 4/11 figure 9. junction capacitance versus reverse voltage applied (typical values) (sot-666) figure 10. junction capacitance versus reverse voltage applied (typical values) (flip-chip) 0 1 012345 c(pf) f=1mhz v =30mv t =25c osc rms j v (v) line 0 1 2 012345 c(pf) f=1mhz v osc =30mv rms t j =25c v line (v) figure 11. relative variation of leakage current versus junction temperature (typical values) (sot-666) figure 12. relative variation of leakage current versus junction temperature (typical values) (flip-chip) 1 10 100 25 50 75 100 125 150 v =5v r i [t ] / i [t =25c] rj rj t (c) j 1 10 100 25 50 75 100 125 i r [t j ]/i r [t j =25c] v r =5v t j (c) figure 13. remaining voltage after ESDAULC6-3BP6 during esd 15 kv positive surge (air discharge) (sot-666) figure 14. remaining voltage after esdaulc6-3bf2 during esd 15 kv positive surge (air discharge) (flip-chip) 10 v/div 0.1 s/div 10 v/div 0.1 s/div
ESDAULC6-3BP6, esdaulc6-3bf2 characteristics 5/11 figure 15. remaining voltage after ESDAULC6-3BP6 during esd 15 kv negative surge (air discharge) (sot-666) figure 16. remaining voltage after esdaulc6-3bf2 during esd 15 kv negative surge (air discharge) (flip-chip) 10 v/div 0.1 s/div 10 v/div 0.1 s/div figure 17. s21 attenuation measurement results of each channel (sot-666) figure 18. s21 attenuation measurement results of channel 1 (flip-chip) 1.0m 3.0m 10.0m 30.0m 100.0m 300.0m 1.0g 3.0g - 20.00 - 15.00 - 10.00 - 5.00 0.00 line 1 line 2 line 3 db f (hz) 1.0m 3.0m 10.0m 30.0m 100.0m 300.0m 1.0g 3.0g - 20.00 - 15.00 - 10.00 - 5.00 0.00 line 1 db f (hz) figure 19. analog crosstalk measurements between channels (sot-666) figure 20. analog crosstalk measurements between channels (flip-chip) db 1.0m 3.0m 10.0m 30.0m 100.0m 300.0m 1.0g 3.0g - 140.00 - 120.00 - 100.00 - 80.00 - 60.00 - 40.00 - 20.00 0.00 xtalk 1/2 f (hz) 1.0m 3.0m 10.0m 30.0m 100.0m 300.0m 1.0g 3.0g - 140.00 - 120.00 - 100.00 - 80.00 - 60.00 - 40.00 - 20.00 0.00 xtalk 1/2 db f (hz)
application examples esdaul c6-3bp6, esdaulc6-3bf2 6/11 2 application examples figure 21. usb2.0 (high speed) protection application schematic figure 22. audio jack protection application schematic figure 23. sim card protection application schematic v bus d+ d- gnd ic to protect usb 2.0 connect or fm tuner audio jack 100pf 330nh sim card processor memor y connect or rst clk data gnd
ESDAULC6-3BP6, esdaulc6-3bf2 ordering information scheme 7/11 3 ordering information scheme esda ulc 6 - 3 b xx esd array ultra low capacitance breakdown voltage packages 6 = 6 volts 3 = 3 lines number of lines protected type b = bidirectional f2 = flip-chip p6 = sot-666
package information ESDAULC6-3BP6, esdaulc6-3bf2 8/11 4 package information epoxy meets ul 94, v0 figure 24. sot-666 footprint (dimensions in mm) table 4. sot-666 dimensions ref. dimensions millimeters inches min. typ. max. min. typ. max. a 0.45 0.60 0.018 0.024 a3 0.08 0.18 0.003 0.007 b 0.17 0.34 0.007 0.013 b1 0.19 0.27 0.34 0.007 0.011 0.013 d 1.50 1.70 0.059 0.067 e 1.50 1.70 0.059 0.067 e1 1.10 1.30 0.043 0.051 e0.50 0.020 l1 0.19 0.007 l2 0.10 0.30 0.004 0.012 l3 0.10 0.004 d b l3 l1 e b1 e1 l2 e a a3 0.50 2.60 0.62 0.30 0.99
ESDAULC6-3BP6, esdaulc6-3 bf2 package information 9/11 figure 25. flip-chip dimensions figure 28. flip-chip tape and reel specifications in order to meet environmental requirements, st offers these devices in ecopack? packages. these packages have a lead-free second level interconnect. the category of second level interconnect is marked on the package and on the inner box label, in compliance with jedec standard jesd97. the maximum ratings related to soldering conditions are also marked on the inner box label. ecopack is an st trademark. ecopack specifications are available at: www.st.com. figure 26. flip-chip footprint figure 27. flip-chip marking 1.1 mm 50 m 1.6 mm 50m 1.0 mm 50 m 315 m 50 500 m 50 650 m 65 copper pad diameter: 220 m recommended solder stencil opening: 330 mrecommended solder mask opening recommendation: 300 mrecommended x y x w z w e dot, st logo xx = marking yww = datecode (y = year ww = week) z = manufacturing location dot identifying pin a1 location user direction of unreeling all dimensions in mm 4 +/- 0.1 8 +/- 0.3 4 +/- 0.1 1.75 +/- 0.1 3.5 +/- 0.1 ? 1.5 +/- 0.1 0.71 +/- 0.05 xxz yww st e xxz yww st e xxz yww st e
ordering information ESDAULC6-3BP6, esdaulc6-3bf2 10/11 5 ordering information 6 revision history table 5. ordering information part number marking package weight base qty delivery mode ESDAULC6-3BP6 3 sot-666 2.9 mg 5000 tape and reel esdaulc6-3bf2 3b flip-chip 2.22 mg 5000 tape and reel table 6. revision history datet revision changes 03-jul-2007 1 initial release
ESDAULC6-3BP6, esdaulc6-3bf2 11/11 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2007 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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